| Summary: | 碩士 === 明新科技大學 === 工業工程與管理系碩士在職專班 === 106 === Yield rate of small and medium size sapphire crystal, 25-30 kg class, becomes stable in Taiwan. However, large-scale touch panel (such as mobile phones greater than 4.7 inches), cutting from small size sapphire crystal will be greatly reduced in utilization. The large-scale sapphire can definitely improve the utilization rate, and also can be drilled out for 2-inch, 4-inch, 6-inch, crystal tiles (high-end panels). This paper studies the contemporary crystal growth technology of large-scale sapphire, and applies the Thermal Technology LLC (USA) machine with Kyropoulos Method to investigate the appropriate process temperature for a large sapphire, 80-kg grade, to improve the yield in an efficient way.
The research method includes five steps: 1. Analyze the cause of the problem; 2. Use the experimental design; 3. Analyze the experimental results; 4. Determine the process parameters; and 5. Perform the improvement actions. The main idea to optimize the crystal growing process goes through analyzing the reasons for the failure and applying experimental design to setting the temperature parameters. The result demonstrates the reduction of common defects of large-scale sapphire and the utilization of crystal ball.
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