| Summary: | 碩士 === 明新科技大學 === 電子工程系碩士班 === 106 === Insulated Gate Bipolar Transistor (IGBT) is capable of providing high power applications allowing wide varieties of application, such as industrial equipments, consumer end electronics, and even military weapon applications. IGBT possesses properties of high impedance input and high current. The authors design the layout for IGBT, and place the order on fabricating the power discrete, which is measured via Agilent 4065 instead of curve tracer. The author sticks aluminum foil with silver glue to the back of the wafer such that the drain on the back of the wafer can be applied with a bias. The characteristics curves are then obtained. The electrical performances can be concluded and analyzed through the measured data. Different wafers correspond to different process conditions. In a wafer, there are many discrete power devices with three different kinds of scales of Gates and Sources. One then tells which scale of design and what process condition can yield better electrical performances according to the measured data. The measuring data at different temperatures is also provided to understand the temperature effects. Finally, the conclusions may convince the designer in which process or size to choose for manufacturing.
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