Negative Bias Temperature Instability of Ge p-MOSFETs with HfO2 Gate Dielectric
碩士 === 銘傳大學 === 電子工程學系碩士班 === 106 === In this study, we do the time-dependent dielectric breakdown(TDDB) for voltage and time to relationship, and negative bias temperature instability(NBTI) in Ge p-MOSFETs with HfO2 gate dielectric were examined. Samples with annealing at 500℃ and non-annealing wer...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2kg4wf |
| Summary: | 碩士 === 銘傳大學 === 電子工程學系碩士班 === 106 === In this study, we do the time-dependent dielectric breakdown(TDDB) for voltage
and time to relationship, and negative bias temperature instability(NBTI) in Ge
p-MOSFETs with HfO2 gate dielectric were examined. Samples with annealing at 500℃
and non-annealing were comparison. The higher temperature and the higher
electrical field in degradation, the worse NBTI effect. The measurement results show
threshold voltage(Vth)、the maximum transconductance(GmMAX)、the minimal
subthreshold swing(SS)、 saturation-region drain current(Idsat)、linear-region drain
current(Idlin) were degradation of the time to dependent. In NBTI lifetime extraction
from the 10% degradation,the device of annealing at 500℃ was better than
non-annealing. We got the △Nit and △Not from I-V curve shift.
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