Study of the Optical and Electrical Properties of ZnO Multilayer Films with Doped Different Elements

• Main Authors: SU,HAO-DE, 蘇浩德
• Other Authors: CHEN,TAO-HSING
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/6n74e4

碩士 === 國立高雄應用科技大學 === 機械工程系 === 106 === In this thesis, the optical and electrical properties of ZnO/Ag/ZnO, ZnO/Mo/ZnO and ZnO/Mo/Ag/ZnO multilayered films are investigated by different annealing temperatures of 200℃,300℃ and 450℃, respectively. The influences of the process parameters in the three different ZMZ, ZAZ, ZAMZ and different oxide layers on the optical, electrical, surface morphology, cross-section, and structural properties of the multilayered as well as the sheet resistance and figure of merit were analyzed. The results showed that the thinner multilayer film ZMZ had the lowest resistivity of 6.44x10-3 (Ω-cm) at annealing temperature 300℃, and the maximum transmittance is up to 87.3%. Meanwhile the Lt.ZAZ multilayered film can get the lowest resistivity 3.95x10-5 (Ω-cm) at annealing temperature 450℃, and the maximum transmittance is more than 88.4%. The Lt.ZAMZ multilayered film can obtain the lowest resistivity 4.30x10-5 (Ω-cm) at annealing temperature 300℃, and the maximum transmittance rate is more than 73.3%.Finally, the figure of merit analysis of multilayered films was performed at annealing temperature 300℃ as the best quality was 2.60×10-2(Ω-1) based on thinner ZAZ.