| Summary: | 碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系博碩士班 === 106 === In this study, delafossite CuFeO2 thin films were deposited onto a quartz substrate with a sol-gel process and then specimens were annealed using an atmospheric pressure plasma between 550 ℃ and 750 ℃ with N2-0%O2 to N2-10%O2. Single delafossite-CuFeO2 phase can be formed at 550 ℃ with N2-0%O2 to N2-3%O2, 600 ℃ with N2-0%O2 to N2-5%O2 and 650 ℃ with N2-3%O2 in the present study. The transmittance of CuFeO2 thin the films was 34-45 % in the visible range, and three absorption edges were found at 300 nm, 400 nm and 800 nm. The direct optical bandgap of CuFeO2 thin films was estimated to be 2.85-3.04 eV. Moreover, the CuFeO2 thin films have p-type semiconductor characteristics, and the thin films had the electrical conductivity of (0.4-7.5)×10-5 S/cm with the carrier concentration of (0.47-22)×1012 cm-3.
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