Hydrogen Plasma Treatment Investigated Metal Oxide Semiconductor Gas Sensing Film

• Main Authors: Luo, Yu-Kai, 羅裕凱
• Other Authors: Chang, Shang-Chou
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/7wcszv

碩士 === 崑山科技大學 === 電機工程研究所 === 106 === This work applies hydrogen plasma treatment on SnO2 films used in gas sensor to form nanoparticles. Increasing surface area of SnO2 by transferring films to particles raises sensor response sensitivity. Effects of plasma process parameters on surface of SnO2 and sensor properties were studied systematically. [11][12] Results show nanoparticles are formed for SnO2 films after plasma treatment. Plasma treatment time effects the size of nanoparticles. Part of SnO2 reduces to metal Sn after plama treatment. SnO appears when the films was sputtered with SnO2 target and deposited on post plasma treated SnO2 films. The contact betwenn n type SnO2 and p type SnO increases gas sensor sensitivity. The hydrogen gas sensitivity for plasma treated SnO2 films with short period is higher than that for as-deposited SnO2 films. However, the gas sensitivity decreases if plasma treatment was too long. This could be attributed to metal Sn formation for long time hydrogen plasma treatment. The gas sensor needs semiconductor like SnO2 rather than metal like Sn.[9][12][18]