| Summary: | 碩士 === 逢甲大學 === 光電學系 === 106 === At present, the world is entering the era of Industry 4.0. The lead of smart factories has greatly increased the demand for sensors. With the development and application of various sensors include smart phones, robots, home security and automobiles, they all need to outfit with detectors. VO2 has great potential for sensor applications due to its thermochromic and thermoelectric. In this paper, VO2 and VO2/TiO2 (A) bilayer films were deposited on B270 glass using plasma-emission-controlled high power impulse magnetron sputtering technology (HiPIMS) without adding substrate bias and annealing process. The effect of HiPIMS and TiO2 seed layer on the crystal structure, thermochromic, thermoelectric properties, bonding state and surface microstructure of the films were discussed.
In the study, the optimum thermochromic film was prepared at substrate temperature of 300 °C. The transmittance difference of wavelength at 2500 nm for VO2 and VO2/TiO2 films before and after phase transition (25 °C and 95 °C) were 18.65 % and 24.38 %, the resistivity was 0.082 Ω∙cm and 0.34 Ω∙cm, and the temperature coefficient of resistance were -7.02%/°C and -8.69%/°C in the temperature range of 60-70 °C. According to the experiment, TiO2 helps VO2 (M) bond formation by epitaxial growth, which let process window become wider, enhence the crystallinity of VO2 (M), reduce the formation of VO2 (B) structure and reduce oxygen deficiency. The thermochromic properties of the film were improved by TiO2 seed layer.
The results show that plasma-emission-controlled HiPIMS can stably and precisely control the stoichiometric ratio of the VO2 and effectively reduce the process substrate temperature to 300 °C. Moreover, it provides thermochromic VO2 thin film process technology with high stability and low substrate temperature.
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