Improving the Operation Electric Field Characteristics for SiOx-based Resistive Random Memory with Copper Chemical Displacement Technique
碩士 === 逢甲大學 === 電子工程學系 === 106 === Resistive random-access memory (ReRAM) is highly valued because of its many advantages, such as scalability, simple structure, and low power consumption. Copper metal, which is used extensively in current semiconductor CMOS technology, is also applied in the El...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ev4v48 |