Study on Liquid-Phase Lateral Heteroepitaxy of Ge-on-Si by Using Powdered Si Solute
碩士 === 中原大學 === 電子工程研究所 === 106 === Due to the 4.2% lattice mismatch between Ge and Si, general direct growth will result in a higher Threading Dislocation Density (TDD), and the need to introduce the complicated composition gradually varied SiGe buffer layer makes the process cost high. In this stu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/936h3s |