Verification of Charge-Based Model for Field Effect Transistors under Near-Threshold Operation
碩士 === 長庚大學 === 電子工程學系 === 106
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ndltd-TW-106CGU054280252019-10-03T03:40:47Z http://ndltd.ncl.edu.tw/handle/r76mx9 Verification of Charge-Based Model for Field Effect Transistors under Near-Threshold Operation 應用以電荷為基底之元件模型探討近臨限電壓操作之場效電晶體 Yung Hsuan Huang 黃詠萱 碩士 長庚大學 電子工程學系 106 K. C. Liu R. D. Chang 劉國辰 張睿達 2018 學位論文 ; thesis 60 en_US |
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en_US |
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Others
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碩士 === 長庚大學 === 電子工程學系 === 106 |
author2 |
K. C. Liu |
author_facet |
K. C. Liu Yung Hsuan Huang 黃詠萱 |
author |
Yung Hsuan Huang 黃詠萱 |
spellingShingle |
Yung Hsuan Huang 黃詠萱 Verification of Charge-Based Model for Field Effect Transistors under Near-Threshold Operation |
author_sort |
Yung Hsuan Huang |
title |
Verification of Charge-Based Model for Field Effect Transistors under Near-Threshold Operation |
title_short |
Verification of Charge-Based Model for Field Effect Transistors under Near-Threshold Operation |
title_full |
Verification of Charge-Based Model for Field Effect Transistors under Near-Threshold Operation |
title_fullStr |
Verification of Charge-Based Model for Field Effect Transistors under Near-Threshold Operation |
title_full_unstemmed |
Verification of Charge-Based Model for Field Effect Transistors under Near-Threshold Operation |
title_sort |
verification of charge-based model for field effect transistors under near-threshold operation |
publishDate |
2018 |
url |
http://ndltd.ncl.edu.tw/handle/r76mx9 |
work_keys_str_mv |
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