2D Copper Sulfide Synthesis Using Graphene Confinement
碩士 === 國立中正大學 === 光機電整合工程研究所 === 106 === Copper sulfide is the p-type semiconductor material. In the Cu-S phase diagram, copper sulfide exist diverse phase and these phase have own unique properties, therefore copper sulfide are expected have widely application. In many literatures, copper sulfide c...
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ndltd-TW-106CCU006510082019-05-16T00:37:20Z http://ndltd.ncl.edu.tw/handle/g42f4d 2D Copper Sulfide Synthesis Using Graphene Confinement 在石墨烯限制條件下合成二維硫化銅 CHIN, HAO-TING 秦浩庭 碩士 國立中正大學 光機電整合工程研究所 106 Copper sulfide is the p-type semiconductor material. In the Cu-S phase diagram, copper sulfide exist diverse phase and these phase have own unique properties, therefore copper sulfide are expected have widely application. In many literatures, copper sulfide can be synthesized by solution and vapor deposition. In this work, we propose the other new method to precipitate copper sulfide, this method is refer the field of solid state chemistry. In this new synthesis method, graphene as the cover layer that can limit material growth and further decrease the thickness of material. In AFM and other characterization measurement, we observe the thickness 150nm CuS be grown in no confinement spacing; however near- single layer β-Cu2S be produced in graphene confinement condition. In Raman result, we find the Cu2S occur phase transition at different temperature. HSIEH, YA-PING 謝雅萍 2018 學位論文 ; thesis 39 en_US |
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碩士 === 國立中正大學 === 光機電整合工程研究所 === 106 === Copper sulfide is the p-type semiconductor material. In the Cu-S phase diagram, copper sulfide exist diverse phase and these phase have own unique properties, therefore copper sulfide are expected have widely application. In many literatures, copper sulfide can be synthesized by solution and vapor deposition. In this work, we propose the other new method to precipitate copper sulfide, this method is refer the field of solid state chemistry. In this new synthesis method, graphene as the cover layer that can limit material growth and further decrease the thickness of material.
In AFM and other characterization measurement, we observe the thickness 150nm CuS be grown in no confinement spacing; however near- single layer β-Cu2S be produced in graphene confinement condition. In Raman result, we find the Cu2S occur phase transition at different temperature.
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author2 |
HSIEH, YA-PING |
author_facet |
HSIEH, YA-PING CHIN, HAO-TING 秦浩庭 |
author |
CHIN, HAO-TING 秦浩庭 |
spellingShingle |
CHIN, HAO-TING 秦浩庭 2D Copper Sulfide Synthesis Using Graphene Confinement |
author_sort |
CHIN, HAO-TING |
title |
2D Copper Sulfide Synthesis Using Graphene Confinement |
title_short |
2D Copper Sulfide Synthesis Using Graphene Confinement |
title_full |
2D Copper Sulfide Synthesis Using Graphene Confinement |
title_fullStr |
2D Copper Sulfide Synthesis Using Graphene Confinement |
title_full_unstemmed |
2D Copper Sulfide Synthesis Using Graphene Confinement |
title_sort |
2d copper sulfide synthesis using graphene confinement |
publishDate |
2018 |
url |
http://ndltd.ncl.edu.tw/handle/g42f4d |
work_keys_str_mv |
AT chinhaoting 2dcoppersulfidesynthesisusinggrapheneconfinement AT qínhàotíng 2dcoppersulfidesynthesisusinggrapheneconfinement AT chinhaoting zàishímòxīxiànzhìtiáojiànxiàhéchéngèrwéiliúhuàtóng AT qínhàotíng zàishímòxīxiànzhìtiáojiànxiàhéchéngèrwéiliúhuàtóng |
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1719167622966149120 |