| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 106 === In this study, we have successfully grown the GaSe flakes by using chemical vapor deposition (CVD) method. Raman spectroscopy, XPS confirm the composition of 2D GaSe material, the peak intensity of A11g and the peak displacement of A21g in raman spectra can be used to determine the numbers of layer of GaSe. Then, we fabricated the GaSe field-effect transistors (FETs) by photolithography, I-V characteristics of GaSe devices showed that GaSe is a p-type semiconductor with the mobility about 14.8 cm2V-1s-1 and the on/off ratio of approximately 104. Afterward, we further probed the photodetection characteristics of devices, the current increased with the increasing power under white light irradiation. In addition, we investigated the photoresponses of devices under different wavelength light illumination, the results showed that GaSe devices have better sensitivity for short wavelength light illumination, the devices have highest responsivity of 31.3 A/W and external quantum efficiency (EQE) of about 82.8%under the 473 nm light illumination.
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