Mid-infrared GeSn Electro-absorption Optical Modulators on Silicon
碩士 === 國立中正大學 === 機械工程系研究所 === 106 === The main objective of this thesis is to develop Si-based GeSn modulator which can operate in the mid infrared range. The modulator has advantages such as low insertion loss, high extinction ratio and easy integration of process, suitable for high-speed modulati...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6u37rj |