| Summary: | 碩士 === 國立中正大學 === 電機工程研究所 === 106 === In this paper, a millimeter-wave front-end transceiver chip is designed and integrated with antenna in package in order to realize millimeter wave 4-channel transmitter array system and 1-channel receiver for 5G Mobile Communications.
This transceiver chip using 90-nm CMOS technology, including low noise amplifier and frequency doubler, driver amplifier and up/down-convert mixer. The measurement result shows that transmitter has 13 dB up-conversion gain, 7.9 dBm OP1dB and 10.4 maximum output power. In receiver, 31.3 dB down-conversion gain, -36 dBm IP1dB and 6.7 dB of double-side band noise figure have been measured. This chip size is 3.75 mm2.
An end-fire angled-dipole antenna is fabricated in RO4350B. Compared with conventional dipole antenna, it enhance half-power beamwidth (HPBW) and reduce back-lobe because of two 60o angle arms and edge reflector. The unit element has 120 o HPBW in 50 GHz and it is suitable for beamforming array. Decoupling structure is used in order to reduce mutual coupling for 1 by 4 antenna array. The trend of radiation pattern in measurement result is similar to simulation connected with K-connector.
Consider of inductive effect in gold stud bond, transitions from chip to carrier board are designed. Chips, antenna, transitions and DC configuration are integrated in flip-chip package.
This 4-channel millimeter-wave transmitter module equipped with IF phase shifter module realizes up to 70o scan angle in beamforming measurement.
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