Fabrication of Indium Doped ZnO Resistive Random Access Memories by Using a Sol-Gel Method

• Main Authors: TSAO, CHE-CHANG, 曹哲彰
• Other Authors: HSU, CHIH-CHIEH
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/624khu

碩士 === 國立雲林科技大學 === 電子工程系 === 105 === In this study, an indium doped ZnO (IZO) layer fabricated by a sol-gel method was used as a resistance switching layer. First, effect of IZO concentration on IZO RRAM was studied. Then, based on the optimal IZO concentration, effect of IZO thickness on IZO RRAM was investigated. Influences of top electrode and annealing effect on resistance switching characteristic of the IZO thin film were explored. A forming-free bipolar IZO RRAM and a WORM IZO RRAM were successfully fabricated. The resistance ratio of the bipolar IZO RRAM is 102 for 500 switching cycles. The resistance ratio of WORM IZO RRAM is 4 x 103. The structures of the IZO RRAMs were obtained by a transmittance electron microscope (TEM) and the chemical bonding was analyzed by an electron spectroscope chemical analyzer (ESCA). Index Terms - Resistive random access memory (RRAM), indium doped ZnO, sol-gel, bipolar, write-once-read-many-times (WORM)