| Summary: | 碩士 === 國立臺北科技大學 === 機電整合研究所 === 105 === In this study, Fe75 Co25 / Si (100) films with three thicknesses were prepared by DC magnetron sputtering at different deposition temperatures (Ts) and power (W). The thickness of the films (tf) was measured by digital holographgic microscope (DHM) and magnetostriction (λ). The M-H loop was measured with a vibration sample magnetometer (VSM). The Youngs modulus (Ef) of the film was measured with a nanoindentation. Measurement of film residual stress by stress measuring systeam (σi), the surface and magnetic domain shape and distribution were observed with a magnetic microscope (MFM). The lattice structure of the film was analyzed by X-ray diffractometer. The samples were then subjected to field thermal annealing and 300 ° C deposition, followed by a analysis.
The results of this study are as follows: (1) When the magnetic field is increased by 1800 Oe, the magnetostriction of the film decreases obviously because of the magnetic moment(τ ⃑) caused by the cantilever beam clamping and the spontaneous magnetization direction out of plane;(2) At a power of 80W and an argon pressure of 5 mtorr, a film of 138 nm thick was deposited at room temperature with the best saturated magnetostriction (14.7 ppm), but the magnetostrictive effect was a shrap drop after field annealing (0.2 ppm). Between Room temperature and 300 ° C deposition of the saturation magnetostriction was slightly reduced (14.7 to 13.2 ppm); (3) the Youngs modulus of the film after field annealing was significantly increased, and the deposition temperature of 300 ° C was close to room temperature deposition. ; (4) because the silicon substrate and magnetic film thermal expansion coefficient is different, resulting in stress relaxation
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