Design and Implementation of Full Bridge Resonant Converter with 500 kHz Switching Frequency Using Wide Bandgap Power Semiconductor Devices
碩士 === 國立臺北科技大學 === 電機工程系電力電子產業研發碩士專班 === 105 === GaN HEMTs are already devoloped in recent years, stability of GaN HEMTs has grow year by year, it has more suitable choosing for any specifications. The characteristic of GaN HEMTs is better than Si MOSFET in every way. Used GaN HEMTs component can l...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7jwdp2 |