The electrical properties of magnetic InN:Mg thin films
碩士 === 國立臺北科技大學 === 資源工程研究所 === 105 === The study reported on the electric properties of Mg-doped InN (InN:Mg) thin films. The magnetic hysteresis curves indicate the InN:Mg films are magnetically ordered at room temperature (RT). And the magnetic properties increase with decreasing temperature. InN...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/rf8se9 |
| Summary: | 碩士 === 國立臺北科技大學 === 資源工程研究所 === 105 === The study reported on the electric properties of Mg-doped InN (InN:Mg) thin films. The magnetic hysteresis curves indicate the InN:Mg films are magnetically ordered at room temperature (RT). And the magnetic properties increase with decreasing temperature. InN:Mg films show n-type conductivity with carrier concentration of 1X1019 cm-3,which indicates films are degenerate semiconductors, by Hall measurements. The resistivity increases with increasing temperature and exhibits metallic-like behavior. The mobility is 746 cm2/V(RT).
The carrier concentration of InN:Mg films reduces to 1X1018 cm-3 (RT) after rapid thermal annealing (RTA) and increase with decreasing temperature. The resistivity decrease with increasing temperature, which is different from that of InN:Mg films without annealing. The mobility is 251 cm2/Vs (RT) and reduces to 204 cm2/Vs at 80 K. The magnetic properties decrease after annealing. It likely originates from the reduction of nitrogen vacancies after annealing by Raman and Hall analysis.
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