| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 105 === In this study, the photovoltaic performance of single crystalline solar cells with surface plasmon effect of metallic nanoparticles and luminescent down-shifting (LDS) of phosphor has been studied. Metallic nanoparticles (NPs) has been widely used as a promising method to capture and couple incident light into solar cells. Another innovative method to enhance photovoltaic performance is using LDS of phosphors. By using luminescent down-shifting effect, the conversion efficiency of silicon solar cells in short wavelength region can be further improved. The mechanism of combined effect of these two materials was discussed and demonstrated.
In the experiment, we deposited SiO2 antireflective coatings (ARC) on silicon solar cells, and embedded Ag nanoparticles in these SiO2 ARC. We also prepared solar cells with SiO2-phosphor mixed antireflective coatings, and embedded Ag nanoparticles in these SiO2-phosphor mixed ARC. The properties including scanning electron microscope image, raman spectrum, absorbance, optical reflectance, external quantum efficiency (EQE), dark current-voltage (I-V), and photovoltaic current-voltage (J-V) are measured and compared to examine plasmon effects and LDS effects on solar cells.
The photovoltaic performance of solar cells with various Ag NPs (Diameter：21.13 nm, 25.03 nm, and 32.14 nm) embedded in SiO2 ARC has been enhanced. The enhancement of short-circuit current densities are 24.43 %, 26.40 %, and 27.86% respectively, which are all higher than the cell with only a SiO2 antireflective layer. The far-field plasmon effect can be observed through reflectance spectrum, and the near-field plasmon effect in wavelength from 400 nm to 550 nm can be confirmed by absorbance and Raman spectrum. The reflectance of solar cells with various Ag NPs (Diameter：21.13 nm, 25.03 nm, and 32.14 nm) embedded in SiO2-phosphor mixed ARC has been much lowered in short-wavelength region, and there’s a peak at around 610 nm, which is the LDS effect of phosphor. The cell with Ag NPs of 21.13 nm diameter incorporated with SiO2-phosphor mixed ARC has the most pronounced enhancement. The short-circuit current density enhancement can be further enhanced from 24.43 % to 25.62 %. In this experiment, we verify that the photovoltaic performance of the cell with Ag NPs of 21.13 nm diameter embedded in a SiO2-phosphor mixed ARC is better than the cell with Ag NPs of 21.13 nm diameter embedded in a SiO2 ARC.
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