| Summary: | 碩士 === 亞洲大學 === 資訊工程學系 === 105 === In this study, a transparent conductive film was deposited on a glass substrate and a PET substrate by magnetron sputtering. The effects of substrate temperature and working pressure on the structure and properties of AZO thin films investigated by using a zinc oxide doped aluminum (AZO) ceramic target. On the other hand, the effect of AgNWs on the flexibility of AZO films investigated. For AZO film, the experimental results indicate that the films show the best direction of (002) under different sputtering conditions. At the power of 50W, the working pressure of 5mtorr, the argon flow rate of 15 sccm and the substrate of heated to 200℃, the grain size of AZO film decreases with the temperature and becomes dense because Al atoms easily activated into the zine oxide structure by high substrate temperature. The penetration rate of 85.23% and the resistivity of 4.72 × 10-4 Ω‧cm. The particle size decreases with the decreased of pressure, and becomes small and compact because of the freedom of particles. When the working pressure is 1 mtorr, the grain size decreases with the decreased pressure. The reason is form the improved partical free path. A penetration rate of 85.42% and a resistivity of 1.14× 10-4 Ω‧cm. For AZO/AgNws film, the resistivity and AFM average roughness respectively of 1.14 × 10-4 Ω‧cm and 9.85 nm. The resistivity after the flexible test of 1000 times is degraded to 1.73×10-3 Ω‧cm.
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