Efficiency Measurement of Boost Using GaN/MOSFET Power Transistors
碩士 === 大華科技大學 === 電機與電子工程系 === 105 === In this study, three different power transistors, gallium nitride, Sixth Generation CoolMOS and traditional IRF840 MOSFET, were used to implement in the DC booster circuit. Input DC voltage of 48V and rated output DC voltage of 200V were specified in our experi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19624505854961052985 |