| Summary: | 碩士 === 南臺科技大學 === 光電工程系 === 105 === In this paper, Ga2O3, TiO2 and SiO2 films were grown by plasma enhanced chemical vapor deposition(PECVD) and RF magnetron sputtering. The results show that the luminescent properties of the films are observed by scanning electron microscope, transmission electron microscope and photoluminescence.
First, a layer of gallium oxide thin film was sputtered on a sapphire substrate using a radio frequency magnetron sputtering system with a film thickness of 100 nm, 200 nm and 300 nm, followed by a RF magnetron sputtering system on another sapphire substrate Sputtering on a layer of titanium dioxide, the film thickness of 30 nm, 60 nm and 90 nm, and then at the same time the gallium oxide film and titanium dioxide film using a high temperature furnace to carry out thermal annealing process 400 º C ~ 800 º C, in the use of instrumental analysis the after the x-ray diffraction analysis, it was found that the film quality had a good data with the highest temperature as the temperature became higher, and the film also had a relative improvement in quality as the temperature increased. the luminous intensity will increase with the thickness of the film has a relatively upward trend, but after annealing, the luminous intensity decreases with increasing temperature, which can explain the main reason for the above two kinds of thin film is mostly from defects.
Followed by the use of RF magnetron sputter to prepare titanium dioxide and gallium oxide stacks with distributed Bragg reflector, and then using RF magnetron sputter coated with a layer of TiO2, then using PECVD plating a layer of SiO2 stack to prepare the distributed Bragg reflector, and The design Bragg reflection wavelength is 450 nm. and the reflectance of the Bragg structure was measured using a light absorption spectrometer.
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