| Summary: | 碩士 === 國立虎尾科技大學 === 材料科學與工程系材料科學與綠色能源工程碩士班 === 105 === This experiment used non-vacuum processes to prepare Si doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. Experiment process is the first,copper-indium-gallium-selenide,and silicon adjusted the ratio of different powders.Inks of the mixtures were made using wet-type ballmilling,and printed onto a substrate to form a precursor film by coating. The inks of Cu(In+Ga) atom ratio were 0.6,0.8,1.0,1.2. Then,the samples were treated with in a furnace at 300 to 500oC, respectively, for 10 minutes, then made to reach with heat treatment to from the chalcopyrite structure.
The change in surface structure were observed by scanning electron microscopy (SEM),Compositions of the films were determined by inductively coupled plasma composition mass spectrometer (ICP-MS) and energy dispersive spectroscopy (EDS),and the band gaps were obtained by Ultraviolet-Visible measurement.
The results showed that the addition of pure silicon at low temperature of 300 oC after annealing with chalcopyrite structure characteristic peak (112), half width narrowing, grain changes, and promote the improvement of crystallization after sintering, prepared film about 1.5~2 um, optical band gap falls in 1.23eV~1.28eV
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