Development of Broadband Stacked Silicon Nitride Antireflection Coatings for Screen-Printed Monocrystalline Silicon Solar Cells Applications

• Main Authors: Kuan-Yu Li, 李冠佑
• Other Authors: 鄭錦隆
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/84zj2c

碩士 === 國立虎尾科技大學 === 光電工程系光電與材料科技碩士班 === 105 === In this thesis, broadband stacked silicon nitride (SiNx) antireflection coatings were developed for screen-printed monocrystalline silicon solar cells (SPMSSCs) applications. The carrier generation rate can be enhanced by the reduction of the reflection. Moreover, the broadband antireflection can be presented by stacked antireflection coating. Furthermore, the open-circuit voltage can be improved by decreasing the surface recombination. Thus, the effects of the SiNx composition and stacked films formed by plasma enhanced chemical-vapor-deposition (PECVD) on photovoltaic characteristics of the SPMSSCs were investigated. The parameters of the composition effects, including flow rate of SiH4 and NH3, the thickness of the SiNx, and the SiNx stacked films ranged from two to four layers, were presented. The refraction, the thickness, the fixed oxide charge, and the interface trap charge in SiNx stacked films were evaluated by the n&k and the C-V measurement. The conversion efficiencies (CEs) of the SPMSSCs were also demonstrated. The results indicate that the interface trap density between SiNx/silicon interface decrease with increasing the flow rate of the SiH4. However, the refraction of SiNx increase with increasing the flow rate of the SiH4. Moreover, the positive fixed oxide charge increase with increasing the flow rate of the NH3. A better CE of the SPMSSCs was achieved by the SiH4/(SiH4+NH3) at 0.45 for one layer SiNx. A CE of 15.8% was demonstrated by the two layers stacked films with combined SiH4/(SiH4+NH3) at 0.63 for bottom layer and SiH4/(SiH4+NH3) at 0.09 for top layer. A CE of 16.7% was demonstrated by the three layers stacked films with combined SiH4/(SiH4+NH3) at 0.63 for bottom layer, SiH4/(SiH4+NH3) at 0.54 for intermediary layer and SiH4/(SiH4+NH3) at 0.09 for top layer. A CE of 16.4% was demonstrated by the four layers stacked films with combined SiH4/(SiH4+NH3) at 0.15 for bottom layer, SiH4/(SiH4+NH3) at 0.11 for second layer, SiH4/(SiH4+NH3) at 0.07 for third layer and SiH4/(SiH4+NH3) at 0.07 for top layer.