Magneto-spin-orbit effects on quantum transport in top gate spin transistors

碩士 === 國立聯合大學 === 機械工程學系碩士班 === 105 === We address spin-polarized electronic transport properties in a top gate (TG) controlled Rashba quantum channel in the presence of a uniform in-plane magnetic filed. The present thesis employs a generalized propagation matrix method to deal with strong spin-or...

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Bibliographic Details
Main Authors: YU,YUN-HSUAN, 余昀軒
Other Authors: Chi-Shung Tang
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/md8fsa
Description
Summary:碩士 === 國立聯合大學 === 機械工程學系碩士班 === 105 === We address spin-polarized electronic transport properties in a top gate (TG) controlled Rashba quantum channel in the presence of a uniform in-plane magnetic filed. The present thesis employs a generalized propagation matrix method to deal with strong spin-orbit coupling influenced spin-preseve (SP) and spin-flip (SF) electronic transport in a single top gate (STG) or a double top gate (DTG), respectively. In the STG system, the second hole-like quasi-bound state (H-QBS) can be found if the TG potential energy is positive (U0> 0) and the TG width, L, is larger than 150 nm. More importantly, when U0 > 0 and L = 250 nm, we can find hole-like bound state (H-BS) with devergent effective mass, in which the analytical formula of the H-BS energy is obtained. In the DTG system, an analytical formula is proposed to accurately estimate the energy position of the n = 2 resonance state (RS) in conductance if U0 = 1 meV and DTG distance, d, is large. More importantly, when U0 > 1.25 meV, it is found that the conductance can exit not only n = 2 but also n = 3 RS feature.