| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 105 === Abstract
ITO thin films have been successfully deposited at room temperature by ion beam sputter deposition. Effect of oxygen partial flow rates, ion beam energy and substrate to target distance are characterized. Experiment results reveal that as oxygen flow rate increases, the resistivity of ITO thin film increases due to reduced oxygen vacancy defects, while transmittance improved due to improved crystalline quality. As ion beam energy increases, the resistivity of ITO thin films increases as well, which is attributed to improved crystalline quality due to increased kinetic energy of sputtered particles. As substrate to target distance increases, the resistivity increases as well which is due to deteriorated film quality that results in increased defect density. ITO thin films deposited under optimized condition results in a σ/α ratio of 1.32×104 Ω-1.
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