| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 105 === In this research, we focus on how to transfer amorphous silicon (a-Si) to poly-crystalline Si (poly-Si). There are many methods to fabricate poly-Si on glass substrate. Chemical vapor depostition can directly deposit poly-Si on heterogeneous substrate. Solid phase crystallization (SPC), Excimer laser crystallization (LC), Metal induced crystallization (MIC) can recrystallize a-Si film to poly Si film by giving secondary energy. These methods usually need much high process temperature. In this decades, application on soft materials has already been a big issue. In order to fabricate poly-Si film on soft board, it is necessary to decrease the process temperature. In our approach, we use aluminum induced crystallization method. By improving the quality of a-Si film with hydrogen or using self-assembles momolayers with different functional group to modify the surface tention and polarity of the substrate prior to the deposition of silicon, the process temperature may decrease to the temperature which soft board can endure.
In this study, we find that the substrate modified by aggregate APTES-SAM has some effects. After Si atoms deposite on the modified substrate by RF-sputterin, there comes some covalent bonding like Si-O-Si or Si-N-N-Si. And the follow up Si atoms will grow near these seed crystal sites. Without capped with aluminum and annealing process, it can grow up poly-Si in partial region. Although this kind of Si film can not called a poly-Si film because there still exists some amorphous regions in the film, we try to figure out this phenomenon and give a reasonable explains.
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