Crystallization control of Ga-doped zinc oxide films prepared by LPCVD on various substrates

• Main Authors: Wong Hui Qi, 黃蕙琪
• Other Authors: Lu-Sheng Hong
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/bu89t3

碩士 === 國立臺灣科技大學 === 化學工程系 === 105 === The film growth behavior of Ga-doped ZnO (GZO) prepared using low-pressure chemical vapor deposition (LPCVD) technique has been investigated. The crystal property of GZO films grown on various substrates including glass, c-plane sapphire, c-plane n-type GaN and p-type GaN was explored. Emphasis was placed upon preparing low resistivity GZO films with textured surface through crystallization control for enhancing light scattering. First of all, GZO films grown on glass exhibited (100), (101), (110) diffraction patterns, which contribute to film surface roughness and correspond a diffusion transmittance of 13% at light wavelength of 460 nm. Nevertheless, GZO films grown on c-plane substrates showed only c-axis aligned crystal characteristics but no pyramidal (110) diffraction peak. Then, two kinds of buffer layers, one is hydrogenated amorphous silicon oxide and the other is amorphous indium tungsten oxide, were deposited before GZO-LPCVD. The results showed that with buffer layers, GZO films grown on c-plane substrates can exhibit similar crystal property with that on glass substrate.