A Broadband High Linearity TR switch for 5G Transceiver

• Main Authors: Shih-Shan Lo, 羅仕善
• Other Authors: Hen-Wai Tsao
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/ap7fsa

碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === This thesis includes the design of millimeter-wave band DPDT(double-pole double throw) switches and the improvement of these circuits. The first part of this thesis illustrates the basic concepts of ratio frequency(RF) switches and then demonstrates the advantage of various kinds of RF switches. In the second part of this thesis we will illustrate the two versions of DPDT switches proposed by us. The first version of DPDT switches is based on the general series-shunt single-pole double-throw(SPDT) switches, we modify its structure and achieve the DPDT switching function. The second version DPDT was design by filter-integration method. The linearity of the DPDT could be enhanced by using that approach. Besides, the different requirements can be met to achieve high isolation and impedance matching. The CMOS process is a trend for system on chip(SOC). The first DPDT switch was designed in 1P6M 40 nm CMOS process, and it achieved an insertion loss of about 4.5 dB, isolation better than 20 dB in 10 MHz-30GHz band and had P1dB about 13 dBm. The second DPDT switch has an insertion loss about 4.2 - 5 dB, isolation better than 20 dB and P1dB better than 20 dBm in 11-30 GHz band. As far as we know, the second DPDT switch has the best P1dB reported in 40 nm CMOS process. The third part of the thesis is about conclusion and future work