Electronic Properties of Epitaxial Graphene Grown on SiC

博士 === 國立臺灣大學 === 應用物理研究所 === 105 === The remarkable properties of epitaxial graphene (EG) growth on SiC shows promising prospects of application in future electronics. This dissertation focuses on the electronic properties of EG. I begin with a basic knowledge of graphene along with necessary backg...

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Main Authors: Chieh-I Liu, 劉玠沂
Other Authors: 梁啟德
Format: Others
Language:en_US
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/53544671501009820121
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spelling ndltd-TW-105NTU052010392017-10-07T04:39:43Z http://ndltd.ncl.edu.tw/handle/53544671501009820121 Electronic Properties of Epitaxial Graphene Grown on SiC 外延石墨烯於碳化矽基板上之電傳輸特性研究 Chieh-I Liu 劉玠沂 博士 國立臺灣大學 應用物理研究所 105 The remarkable properties of epitaxial graphene (EG) growth on SiC shows promising prospects of application in future electronics. This dissertation focuses on the electronic properties of EG. I begin with a basic knowledge of graphene along with necessary background for the research. There will be demonstrations of sample preparations and experimental setups. The experimental results described in this thesis are divided into three parts. The first topic involves charge trapping, weak localization and electron-electron interactions on EG. Activation energies ΔE for charge trapping in epitaxial graphene ranging from 196meV to 34meV. It is shown that ΔE decreases with increasing mobility indicates the importance of sample quality. Different scattering channels can be recognized by studying the weak localization. Also, it is found that both the zero-field resistance and the WL correction term can be used as reliable thermometers. In the high-temperature regime, a logarithmic temperature (lnT) dependence of the Hall slope is a good physical quantity which allows us to investigate electron-electron interactions. The study on variable range hopping (VRH) and non-linear transport in monolayer epitaxial graphene is described in the second topic. The resistance curve derivative analysis method can be used to determine whether Mott VRH or Efros-Shklovskii VRH is the dominant transport mechanism in the linear regime. In the non-linear regime in which the conductance shows a strong dependence on voltage, it is found that the experimental results can be well described by existing theoretical models. The last topic describes the preliminary results on Parylene C encapsulation. The weak interactions on the interface of Parylene C/graphene shows Parylene C is a suitable encapsulated material. Besides, surface conductance measurement provides a faster and convenient way to characterize longitudinal resistivity of large-area graphene samples. The variations in quantities after exposing to environmental chamber and ambient air shows room for improvement in adhesion between Parylene C and graphene. 梁啟德 2017 學位論文 ; thesis 75 en_US
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language en_US
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description 博士 === 國立臺灣大學 === 應用物理研究所 === 105 === The remarkable properties of epitaxial graphene (EG) growth on SiC shows promising prospects of application in future electronics. This dissertation focuses on the electronic properties of EG. I begin with a basic knowledge of graphene along with necessary background for the research. There will be demonstrations of sample preparations and experimental setups. The experimental results described in this thesis are divided into three parts. The first topic involves charge trapping, weak localization and electron-electron interactions on EG. Activation energies ΔE for charge trapping in epitaxial graphene ranging from 196meV to 34meV. It is shown that ΔE decreases with increasing mobility indicates the importance of sample quality. Different scattering channels can be recognized by studying the weak localization. Also, it is found that both the zero-field resistance and the WL correction term can be used as reliable thermometers. In the high-temperature regime, a logarithmic temperature (lnT) dependence of the Hall slope is a good physical quantity which allows us to investigate electron-electron interactions. The study on variable range hopping (VRH) and non-linear transport in monolayer epitaxial graphene is described in the second topic. The resistance curve derivative analysis method can be used to determine whether Mott VRH or Efros-Shklovskii VRH is the dominant transport mechanism in the linear regime. In the non-linear regime in which the conductance shows a strong dependence on voltage, it is found that the experimental results can be well described by existing theoretical models. The last topic describes the preliminary results on Parylene C encapsulation. The weak interactions on the interface of Parylene C/graphene shows Parylene C is a suitable encapsulated material. Besides, surface conductance measurement provides a faster and convenient way to characterize longitudinal resistivity of large-area graphene samples. The variations in quantities after exposing to environmental chamber and ambient air shows room for improvement in adhesion between Parylene C and graphene.
author2 梁啟德
author_facet 梁啟德
Chieh-I Liu
劉玠沂
author Chieh-I Liu
劉玠沂
spellingShingle Chieh-I Liu
劉玠沂
Electronic Properties of Epitaxial Graphene Grown on SiC
author_sort Chieh-I Liu
title Electronic Properties of Epitaxial Graphene Grown on SiC
title_short Electronic Properties of Epitaxial Graphene Grown on SiC
title_full Electronic Properties of Epitaxial Graphene Grown on SiC
title_fullStr Electronic Properties of Epitaxial Graphene Grown on SiC
title_full_unstemmed Electronic Properties of Epitaxial Graphene Grown on SiC
title_sort electronic properties of epitaxial graphene grown on sic
publishDate 2017
url http://ndltd.ncl.edu.tw/handle/53544671501009820121
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