| Summary: | 碩士 === 國立臺灣大學 === 物理學研究所 === 105 === Graphene has been extensively studied due to its extraordinary properties and potentials for device applications in recent years. Among the methods of producing graphene, epitaxial growth method has gained a great deal of interest since epitaxial graphene on silicon carbide (SiC) substrate can be wafer-scale and the transfer process is not required. Nowadays, one of the important issues regarding graphene is to understand the nature of transport properties at low temperatures. In this thesis, we focus on the analysis of transport properties on the graphene sample. We fabricated monolayer epitaxial graphene on a SiC substrate, and a series of the transport measurements was made on the sample. By using the resistance curve derivative analysis method, we found that the transport of our sample can be well fitted by the variable range hopping (VRH) models. Besides, we also observed a crossover from Efros-Shklovskii (E-S) VRH to Mott VRH by increasing the applied magnetic field as well as by a gentle heating process. Our new experimental results suggest that monolayer graphene on SiC is an interesting platform for probing VRH conduction.
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