Growth and Analysis of AuMn Alloy-Catalyzed Si Nanowires

• Main Authors: Chen-Yu Hu, 胡宸瑜
• Other Authors: 溫政彥
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/udt6hp

碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 105 === Because of the transport property of semiconductors and the ability to control the electron spin, diluted magnetic semiconductor nanowires have good potential in spintronic applications. The confinement effect in the nanowire structure also improves the spin relaxation in the spintronic devices. In addition, manganese can provide large magnetic moment in silicon, Mn-doped Si nanowires is therefore an ideal candidate for spintronic devices. However, the low solubility of manganese in silicon making it very difficult to fabricate manganese-doped silicon nanowires. In this study, the process window of growing Si nanowire using AuMn and pure Mn catalysts via the vapor-liquid-solid mechanism (VLS) in a chemical vapor deposition (CVD) reactor is firstly investigated. Analyses on the resulted structure and composition distribution and the effects from the growth substrates are discussed. The Ge sites in SiGe nanowires helps the incorporation of Mn in the nanowires. Thus, the second part of this study focuses on the incorporation of Mn into SiGe nanowires through oxidizing the as-grown AuMn/SiGe nanowires to form a SiGe section with a higher Ge content. The morphology change of the nanowire due to the oxidation process and the change of chemical distribution is discussed.