Analysis of Strain and Defect in GaN on Commercial Patterned-Sapphire Substrates with Raman Spectrometer
碩士 === 國立臺灣大學 === 光電工程學研究所 === 105 === Using Metal-Organic Chemical Vapor Deposition to grow gallium nitride thin film on a patterned sapphire substrate can reduce the threading dislocation density and increase the crystal quality, and reduce the defect density (defect density).Most of literature we...
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| Format: | Others |
| Language: | zh-TW |
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2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8x6745 |