| Summary: | 碩士 === 國立臺南大學 === 電機工程學系碩博士班 === 105 === Abstract：
This paper studies the novel semiconductor materials Cu-Sb-Se. The copper-based ternary chalcogenide thin films Cu3SbSe4 (CASe) were prepared by a simple and low-cost non-vacuum technology－Solvothermal Refluxing Method. The copper, antimony and selenium powder with stoichiometric ratio of 3: 1: 4 were added into the novel organic solvent D400 (polyetheramine) and selenized at the temperature are 180℃, 220℃, 250℃ for 1 hour, 15 hours and 30 hours, respectively. The nano-inks were also discussed and analyzed for its structural phase, surface morphology, composition and optical properties. Finally, we have found that a single ternary pure phase Cu3SbSe4 film with a tetragonal crystal structure can be successfully obtained at 250℃ for 30 hours, which has good crystallinity. This can be effectively used as a thermoelectric material in thermoelectric devices.
We used Solvothermal Refluxing Method to synthesize nano-inks at low temperature for a short period of time and then selenization process in an atmosphere filled with selenium. The selenization temperatures range are from 300℃ to 625℃ and the selenization times are from 0 minute to 90 minutes. By observing the phase changes in different stages with temperature and time changes to understand the reaction mechanism of Cu, Sb, Se and D400 (polyetheramine), and further deduces CASe particle growth mechanism. The results of the electrical properties of the CASe films after the selenization process showed that the P-type semiconductor film. The carrier mobility was 4.76×101 cm2/V-s, the carrier concentration was 3.11×1016 cm-3.
In the future work, use the Solvothermal Refluxing Method can be a large number of manufacturing CASe films, after selenization process can improve its crystallinity, and widely application in thermoelectric devices.
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