| Summary: | 碩士 === 國立臺南大學 === 綠色能源科技學系碩士班 === 105 === This study is used the electrospray to preparation perovskite layer and CuOx film on ITO Substrate, CuOx is between 1.2 and 2.2 eV for a good photoelectric material. Fabrication of Perovskite PHJ Hybrid Solar Cells, The device architecture ITO/CuOx/Perovskite/C60/BCP/Al, and we to sum up of CuOx annealing temperature in 500℃, thickness 48nm crystallization properties of CuOx films at 500℃ parameter have Voc of 0.7V,Jsc of 17.22mA cm-2 , fill factor of 0.48 and efficiencies of 5.83%. In addition, IPCE and UV-Vis support CuOx film in addition to play the hole transport layer also has some photoelectric conversion efficiency.
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