Comparison of 16-nm Inversion, Accumulation and Junctionless Modes N-type Fin Field Effect Transistors

Comparison of 16-nm Inversion, Accumulation and Junctionless Modes N-type Fin Field Effect Transistors

碩士 === 國立清華大學 === 工程與系統科學系 === 105 === abstract hide

Bibliographic Details
Main Authors:	Yang, Shang-Yi, 楊上逸
Other Authors:	Wu, Yung-Chun
Format:	Others
Language:	en_US
Published:	2017
Online Access:	http://ndltd.ncl.edu.tw/handle/8ztcxg

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