A Study of New Plasma Induced Damage Recorder and Charge Splitting Characteristic by Advanced FinFET Logic CMOS Technology

A Study of New Plasma Induced Damage Recorder and Charge Splitting Characteristic by Advanced FinFET Logic CMOS Technology

碩士 === 國立清華大學 === 電子工程研究所 === 105 === abstract hide

Bibliographic Details
Main Authors: Hsieh, Ting-Huan, 謝定寰
Other Authors: King, Ya-Chin
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/878g4q
Description
Summary:碩士 === 國立清華大學 === 電子工程研究所 === 105 === abstract hide

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