A Study of P-Type One-Time Programmable Memory Cell with FinFET CMOS Fully Compatible Technology

A Study of P-Type One-Time Programmable Memory Cell with FinFET CMOS Fully Compatible Technology

碩士 === 國立清華大學 === 電子工程研究所 === 105 === abstract hide

Bibliographic Details
Main Authors: Yuan, Jo-En, 袁若恩
Other Authors: Lin, Chrong-Jung
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/kc48e9
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spelling ndltd-TW-105NTHU54280322019-05-15T23:53:46Z http://ndltd.ncl.edu.tw/handle/kc48e9 A Study of P-Type One-Time Programmable Memory Cell with FinFET CMOS Fully Compatible Technology 應用於鰭式電晶體邏輯製程之P型一次性寫入記憶體研究 Yuan, Jo-En 袁若恩 碩士 國立清華大學 電子工程研究所 105 abstract hide Lin, Chrong-Jung 林崇榮 2017 學位論文 ; thesis 77 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 電子工程研究所 === 105 === abstract hide
author2 Lin, Chrong-Jung
author_facet Lin, Chrong-Jung
Yuan, Jo-En
袁若恩
author Yuan, Jo-En
袁若恩
spellingShingle Yuan, Jo-En
袁若恩
A Study of P-Type One-Time Programmable Memory Cell with FinFET CMOS Fully Compatible Technology
author_sort Yuan, Jo-En
title A Study of P-Type One-Time Programmable Memory Cell with FinFET CMOS Fully Compatible Technology
title_short A Study of P-Type One-Time Programmable Memory Cell with FinFET CMOS Fully Compatible Technology
title_full A Study of P-Type One-Time Programmable Memory Cell with FinFET CMOS Fully Compatible Technology
title_fullStr A Study of P-Type One-Time Programmable Memory Cell with FinFET CMOS Fully Compatible Technology
title_full_unstemmed A Study of P-Type One-Time Programmable Memory Cell with FinFET CMOS Fully Compatible Technology
title_sort study of p-type one-time programmable memory cell with finfet cmos fully compatible technology
publishDate 2017
url http://ndltd.ncl.edu.tw/handle/kc48e9
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