Optically-excited THz emission from InN thin films and pyramids

碩士 === 國立清華大學 === 光電工程研究所 === 105 === THz emission mechanism from Indium Nitride (InN) such as drift current, diffusion current caused photocurrent surge and optical rectification effect is investigated by the setup of Time-Domain Spectroscopy in THz range (THz-TDS). We also analyzed the complex die...

Full description

Bibliographic Details
Main Authors: Huang, Tzu-Yuan, 黃咨元
Other Authors: Pan, Ci-Ling
Format: Others
Language:en_US
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/frr5vy

Similar Items