The study on optoelectronic properties of GaSe/InSe heterostructure

碩士 === 國立中山大學 === 物理學系研究所 === 105 === 2D materials with a wealth of exotic dimensional-dependent properties are promising candidates for next-generation ultrathin and flexible optoelectronic devices. Indium selenide (InSe) and gallium selenide (GaSe), belonging to group-III monochalcogenides, are in...

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Bibliographic Details
Main Authors: Chuan-Ruei Guo, 郭川瑞
Other Authors: Yi-Ying Lu
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/398g55

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