Effect of HCP element additions on optoelectronic properties of Cu-based thin film

• Main Authors: HUNG, SHU-TSE, 洪書澤
• Other Authors: Lin, Hsuan-Kai
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/eyz96d

碩士 === 國立屏東科技大學 === 材料工程研究所 === 105 === Cu based (CuMg、CuZr、CuTi) and ITO/Cu base films with different contents are deposited on glass substrates and then treated by furnace and laser annealing process. The structural, optical and electrical properties of the as-deposited and annealed samples are investigated and compared.According to results, it shows the best optical and elestrical properties of ITO/Cu51Mg49, the value of Figure of merit (FOM) is up to 1.23 × 10-3 Ω-1 (49.5 Ω/□, 75.6%).After the annealing proces, the value could increase up to 2.94 × 10-3 Ω-1 (26.6 Ω/□, 77.5%). In addition, the electrical property of ICZ and ICT films can be effectively improved using the laser annealing process due to its lower formation of metal oxide.Finally, the relative change in resistivity of the as-deposited ITO/Cu based sample following fatigue testing with a bend radius of 7 mm (ΔR/R0 = 0.21~0.54) is significantly lower than that of a pure ITO film of roughly equivalent thickness (ΔR/R0 = 0.93).