| Summary: | 碩士 === 國立高雄第一科技大學 === 電機工程研究所碩士班 === 105 === The graphene is one kind has of carbon material the two-dimensional structure, because it has extremely good characteristics and so on electricity, optics, mechanics and heat studies, until now still was prepares is paid attention the thinnest material which and the future favors, because also its theory electric capacity is higher than the graphite, and has the migration of electrons speed quick merit, causes recently to develop in the energy domain application rapidly.
This study provides a simple preparation method, easy to proliferate using the copper to silicon the characteristic, copper silicide and graphene growth at the same time; First, use Magnetron Sputtering system to copper-plating silicon thin film on substrate, afterwards carries on the annealing by the high temperature annealing system, the aim of this study is annealing temperature to the copper and silicon thin film influence discussion, afterwards changes the different parameter such as Sputtering time, carbon source gas flow rate and annealing time, using XRD and Raman spectroscopy analysis, find the best system regulation parameter, by way of two stage processes, success preparation copper silicide and the graphene composite materials on the substrate.
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