Resistance Switching in ZnO-Based Memristors with a p-n Junction
碩士 === 國立東華大學 === 物理學系 === 105 === Resistance switching in ZnO-based memristive devices with a p-n junction has been investigated. Sputtering was performed to prepare devices with layered structures as Ti/ZnO/p+-Si. Programming strategies were developed in terms of using different operation modes, i...
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| Format: | Others |
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2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d3gz7g |