| Summary: | 碩士 === 國立東華大學 === 材料科學與工程學系 === 105 === A vapor transport process was used to grow indium oxide nanowires on gold catalyzed graphene oxide surfaces by vapor-liquid-solid (VLS) mechanism and graphene oxide surfaces by vapor-solid (VS) mechanism, respectively. The samples were characterized by various characterization techniques and their growth mechanism were discussed. Both X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the as-grown indium oxide nanowires are face centered cubic FCC with [100] growth direction. The graphene oxide was reduced to reduced graphene oxide during growth. The FE-SEM images show a high density of nanowires on graphene oxide surface grown by VLS mechanism. Moreover, the In2O3 nanowires were found to preferential grown on thin layers of graphene oxide. The two dimensional growth of In2O3 films were observed on thick layers of graphene oxide. The samples show a higher visible light absorption possible due to the reduced graphene oxide of heterostructures confirmed by UV/Vis absorption spectra. Compared to graphene oxide, the reduced graphene oxide shows a higher luminescence property. On the contrary, the In2O3/rGO heterostures shows weaker luminescence properties due to quenching effect. For visible light photocatalytic applications, the In2O3/rGO heterostructures show a higher visible-light-driven photocatalytic activity owing to the increased photo-induced charge separation efficiency, further increase the formation of superoxide radicals and hydroxyl radicals.
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