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碩士 === 國立中央大學 === 機械工程學系 === 105 === In this study, ultra-thin hydrogenated amorphous silicon passivation layer (< 10 nm)was prepared on silicon substrate by using silane (SiH4), hydrogen (H2) and argon (Ar) to apply silicon heterojunction (SHJ) solar cells. The chamber of PECVD processing enviro...

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Main Authors: Ching-Lin Tseng, 曾靜琳
Other Authors: 利定東
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/2xt46m
id ndltd-TW-105NCU05489082
record_format oai_dc
spelling ndltd-TW-105NCU054890822019-05-16T00:08:08Z http://ndltd.ncl.edu.tw/handle/2xt46m none 以電漿診斷探討電漿輔助化學氣相沉積系統之製程環境優化對氫化非晶矽鈍化品質之影響 Ching-Lin Tseng 曾靜琳 碩士 國立中央大學 機械工程學系 105 In this study, ultra-thin hydrogenated amorphous silicon passivation layer (< 10 nm)was prepared on silicon substrate by using silane (SiH4), hydrogen (H2) and argon (Ar) to apply silicon heterojunction (SHJ) solar cells. The chamber of PECVD processing environment will affect the quality of growing intrinsic passivation layer due to the fact that SHJ solar need a very thin passivation layer. It is our focus of this study on how to maintain processing an excellent passivation layer in a better pre-coating environment. Therefore, the changes of the pre-coating environment in PECVD were investigated. The results show that the passivation film with no pre-coating has a carrier lifetime of 24us, but after pre-coating its carrier lifetime up to 800us. The difference between pre-coating environment and without pre-coating environment can be analyzed by Optical Emission Spectroscopy (OES) and Quadrupole mass spectrometry (QMS). It is found that an appropriate environment of pre-coating established as follows:the absolute intensity of SiH* needs to be saturated, the ratio of Si*/SiH* is 0.3~0.4, the ratio of SiH2/SiH4 to reaches the lowest point, the water vapor is reduced to 2x106(c/s), by-products of F after cleaning needs to be reduced and thickness control on the pre-coating is 1800nm~1900nm. The best pre-coating environment in the PECVD system can be obtained from above experimental and analytical results. 利定東 2016 學位論文 ; thesis 131 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中央大學 === 機械工程學系 === 105 === In this study, ultra-thin hydrogenated amorphous silicon passivation layer (< 10 nm)was prepared on silicon substrate by using silane (SiH4), hydrogen (H2) and argon (Ar) to apply silicon heterojunction (SHJ) solar cells. The chamber of PECVD processing environment will affect the quality of growing intrinsic passivation layer due to the fact that SHJ solar need a very thin passivation layer. It is our focus of this study on how to maintain processing an excellent passivation layer in a better pre-coating environment. Therefore, the changes of the pre-coating environment in PECVD were investigated. The results show that the passivation film with no pre-coating has a carrier lifetime of 24us, but after pre-coating its carrier lifetime up to 800us. The difference between pre-coating environment and without pre-coating environment can be analyzed by Optical Emission Spectroscopy (OES) and Quadrupole mass spectrometry (QMS). It is found that an appropriate environment of pre-coating established as follows:the absolute intensity of SiH* needs to be saturated, the ratio of Si*/SiH* is 0.3~0.4, the ratio of SiH2/SiH4 to reaches the lowest point, the water vapor is reduced to 2x106(c/s), by-products of F after cleaning needs to be reduced and thickness control on the pre-coating is 1800nm~1900nm. The best pre-coating environment in the PECVD system can be obtained from above experimental and analytical results.
author2 利定東
author_facet 利定東
Ching-Lin Tseng
曾靜琳
author Ching-Lin Tseng
曾靜琳
spellingShingle Ching-Lin Tseng
曾靜琳
none
author_sort Ching-Lin Tseng
title none
title_short none
title_full none
title_fullStr none
title_full_unstemmed none
title_sort none
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/2xt46m
work_keys_str_mv AT chinglintseng none
AT céngjìnglín none
AT chinglintseng yǐdiànjiāngzhěnduàntàntǎodiànjiāngfǔzhùhuàxuéqìxiāngchénjīxìtǒngzhīzhìchénghuánjìngyōuhuàduìqīnghuàfēijīngxìdùnhuàpǐnzhìzhīyǐngxiǎng
AT céngjìnglín yǐdiànjiāngzhěnduàntàntǎodiànjiāngfǔzhùhuàxuéqìxiāngchénjīxìtǒngzhīzhìchénghuánjìngyōuhuàduìqīnghuàfēijīngxìdùnhuàpǐnzhìzhīyǐngxiǎng
_version_ 1719160947107430400