Study of Synthesis of N-type Silicon Nanocrystals by Laser Induced Redox Process

• Main Authors: Heng-Chun Tai, 戴衡君
• Other Authors: 李天錫
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/2a68rd

碩士 === 國立中央大學 === 機械工程學系 === 105 === In general, porous silicon structures are produced using electrochemical etching driven by electric fields. The desired porous silicon structure is generated by controlling the current, voltage, and time in the etchant. The characteristic of this study is not applied to the external electric field, only use of 1064nm wavelength laser and etchant, in the N-type silicon wafer surface redox reaction can produce porous silicon structure, and the etching phenomenon occurs not only on the laser irradiation side but also on the non-laser irradiation side. But by adjusting the volume ratio of the etchant, it can control the etching phenomenon only occurs on the side of the non-laser irradiation. When the etching time changes, the surface structure of the etching point will also change. By changing the volume ratio of the etchant, the size of the nanocrystal grains can be changed. According to the experimental results, this phenomenon can be explained by electrolyte-semiconductor barrier (Schotty barrier) theory.