Study of the Dynamic Characteristics of High-Power GaN Heterostructure Field-Effect Transistors
碩士 === 國立中央大學 === 電機工程學系 === 105 === In this work, the dynamic characteristics of an enhancement-mode (E-mode) high power GaN heterostructure field-effect transistor (HFET) are investigated to correlate with charge trapping in the device. It has been reported that the dynamic on-resistance of GaN-ba...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40717100696170886599 |