Improving the Transport Properties of AlInN/AlN/GaN Heterostructures by Using Nitrogen Carrier Gas in Metal-Organic Chemical Vapor Deposition
碩士 === 國立中央大學 === 電機工程學系 === 105 === Compared to conventional AlGaN/GaN heterostructures, AlInN/GaN heterostructures have higher two-dimensional electron gas (2DEG) concentrations, which result in lower on-resistance of high electron mobility transistors (HEMTs). However, previous reports show that...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17671413745948559447 |