Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation
碩士 === 國立中央大學 === 電機工程學系 === 105 === In this thesis, in order to reduce the process cost, we use C language software to simulate characteristics of semiconductor device. We developed 3D barycenter module which is composed of tetrahedral mesh elements to simulate 3D semiconductor device. The 3D modul...
Main Authors: | Kai-Che Chien, 簡楷哲 |
---|---|
Other Authors: | Yao-Tsung Tsai |
Format: | Others |
Language: | zh-TW |
Published: |
2017
|
Online Access: | http://ndltd.ncl.edu.tw/handle/v2yr4d |
Similar Items
-
Finding internal vector from the plane equation and axis method in tetrahedron element for 3D semiconductor Device Simulation
by: Ding-Guo Shih, et al.
Published: (2018) -
Vector fields satisfying the barycenter property
by: Lee Manseob
Published: (2018-04-01) -
Finding internal vector from the edge vector in arbitrary tetrehedron element for 3D semiconductor Device Simulation
by: Chiu-Wei Hao, et al.
Published: (2017) -
Finding internal vector from the edge vector in obtuse triangle element for 2D Semiconductor Device Simulation
by: Wei-ting Shen, et al.
Published: (2016) -
Development of tetrahedron circumcenter element and its applications to 3-D semiconductor device simulation
by: Yun -Quan Hong, et al.
Published: (2017)