Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation

碩士 === 國立中央大學 === 電機工程學系 === 105 === In this thesis, in order to reduce the process cost, we use C language software to simulate characteristics of semiconductor device. We developed 3D barycenter module which is composed of tetrahedral mesh elements to simulate 3D semiconductor device. The 3D modul...

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Main Authors:	Kai-Che Chien, 簡楷哲
Other Authors:	Yao-Tsung Tsai
Format:	Others
Language:	zh-TW
Published:	2017
Online Access:	http://ndltd.ncl.edu.tw/handle/v2yr4d

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spelling	ndltd-TW-105NCU054420242019-05-15T23:39:52Z http://ndltd.ncl.edu.tw/handle/v2yr4d Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation 四面體網格面重心向量開發及其在三維半導體元件模擬之應用 Kai-Che Chien 簡楷哲碩士國立中央大學電機工程學系 105 In this thesis, in order to reduce the process cost, we use C language software to simulate characteristics of semiconductor device. We developed 3D barycenter module which is composed of tetrahedral mesh elements to simulate 3D semiconductor device. The 3D module is better than 2D module and it increases the flexibility to fit the environment. First of all, a simple tetrahedral resistor and PN junction will be simulated and compare to the theoretical for verification. Next, the tetrahedral module will be applied to trapezoidal module, and extended to cylindrical semiconductor device. The 3D module can help us improve the accuracy of semiconductor device. Yao-Tsung Tsai 蔡曜聰 2017 學位論文 ; thesis 57 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立中央大學 === 電機工程學系 === 105 === In this thesis, in order to reduce the process cost, we use C language software to simulate characteristics of semiconductor device. We developed 3D barycenter module which is composed of tetrahedral mesh elements to simulate 3D semiconductor device. The 3D module is better than 2D module and it increases the flexibility to fit the environment. First of all, a simple tetrahedral resistor and PN junction will be simulated and compare to the theoretical for verification. Next, the tetrahedral module will be applied to trapezoidal module, and extended to cylindrical semiconductor device. The 3D module can help us improve the accuracy of semiconductor device.
author2	Yao-Tsung Tsai
author_facet	Yao-Tsung Tsai Kai-Che Chien 簡楷哲
author	Kai-Che Chien 簡楷哲
spellingShingle	Kai-Che Chien 簡楷哲 Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation
author_sort	Kai-Che Chien
title	Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation
title_short	Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation
title_full	Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation
title_fullStr	Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation
title_full_unstemmed	Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation
title_sort	finding internal vector from the barycenter of vector in tetrahedron for 3-d semiconductor device simulation
publishDate	2017
url	http://ndltd.ncl.edu.tw/handle/v2yr4d
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Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation

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